Interactions at Interface between Cu99Ti1 Thin Films and Polyimide

E. Kondoh(a), T.P. Nguyen(b), D.-W. Plachke(c), H. Carstanjen(c), E. Arzt(a)

a) Max-Planck-Institut fuer Metallforschung, Institut fuer Werkstoffwissenschaft
Seestra§e 92, 70174 Stuttgart, Germany
b)Institut des Materiaux de Nantes, Laboratorie de Physique Cristalline
2, Rue de la Houssiniere, 44072 Nantes Cedex 03, France
c)Max-Planck-Institut fuer Metallforschung, Institut fuer Physik
Heisenbergstra§e 1, 70569 Stuttgart, Germany

Material characteristics and chemistry of the interface formed between Cu99T~1 films and polyimide were investigated. Plasma pre-treatment of the polyimide surface and post-metallization annealing were used to modify the interface. Composition analysis data taken from the interface indicated no significant Cu diffusion into the polyimide layer and accretion of nitrogen at the interface. The formation of Cu and Ti compounds by carbonyl bond breaking, suggested by X-ray photoelectron spectroscopy, could explain suppression of Cu diffusion and drastic increase of adhesion strength.


Updated 14.2.1997 by E. Kondoh
kondoh@ccn.yamanashi.ac.jp
http://www.ccn.yamanashi.ac.jp/~kondoh