The metallization process for the chemical vapor deposition (CVD) of aluminum from dimethylaluminumhydride ((Al(CH3)2H, DMAH)) has received considerable attention. In this paper, the authors discuss the vaporization of DMAH, Al deposition kinetics, selective growth, and film properties. Although DMAH has extremely high viscosity (about 4000cP), it was found by metering the DMAH flow rate that DMAH can be vaporized while maintaining a high efficiency of 80-100% of the theoretical flow rate, even with the conventional bubbling method. The film growth rate followed the Arrhenius law at lower temperatures (< 250-270°C, depending on the partial pressure of DMAH). The maximum growth rate attained was about 1160 nm/min at 350°C. In the surface-reaction-controlled region, Al was deposited selectively on metal substrates. The origin of selectivity is discussed from the viewpoint of surface chemical conditions. The Al deposition rate was independent of the deposition area, which is discussed in terms of the supply and consumption balance of Al.