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  1. Minseok Kim, Hye-Mi Kim, Hiroshi Yanagi, Keiga Fukui and Jin-Seong Park “Electrical conductivity, Seebeck coefficient, and crystal growth of p-type tellurium films through temperature dependent RF sputtering”, Nanotechnology, 34, 385202 (2023).
  2. Yuki Iguchi, Koichi Sato, Kazutoshi Inoue, Keiga Fukui, Hiroshi Yanagi “Br-doped n-type SnS single crystals with carrier concentrations suitable for homojunction solar cells”, Solid State Sciences, 140, 107206 (2023).
  3. Issei Suzuki, Sakiko Kawanishi, Takahisa Omata and Hiroshi Yanagi “Current status of n-type SnS: paving the way for SnS homojunction solar cells”, J. Phys. Energy, 4, 042002 (2022).
  4. Bor-Rong Chen, Stephan Lany, Leah L. Kelly, Elisabetta Arca, Yuki Iguchi, John D. Perkins, Hiroshi Yanagi, Michael F. Toney, Laura T. Schelhas, and Andriy Zakutayev “Antimony nitride discovered by theoretical structure prediction, rapid thermal annealing, and in situ X-ray diffraction”, Cell Reports Physical Science, 3, 100980 (2022).
  5. Issei Suzuki, Sakiko Kawanishi, Bauers R. Sage, Andriy Zakutayev, Lin Zexin, Satoshi Tsukuda, Hiroyuki Shibata, Minseok Kim, Hiroshi Yanagi, Takahisa Omata “n-type electrical conduction in SnS thin films”, Phys. Rev. Materials, 5, 125405 (2021).
  6. S. Kawanishi, I. Suzuki, S. R. Bauers, A. Zakutayev, H. Shibata, H. Yanagi, T. Omata “SnS Homojunction Solar Cell with n‐Type Single Crystal and p‐Type Thin Film”,Solar RRL, 2000708 (2021).
  7. Minseok Kim, and Hiroshi Yanagi “Tuning of ionization potential in amorphous Cd-In-O thin films”, Solid-State Electronics, 163, 107664 (2020).
  8. Minseok Kim, and Hiroshi Yanagi “Individual Tuning of Ionization Potential and Electron Affinity by Composition Control of Amorphous Cd-In-Ga-O Thin Film”, Journal of the Ceramic Society of Japan, 127, 785-787 (2019).
  9. Issei Suzuki, Yuki Iguchi, Chiyuki Sato, Hiroshi Yanagi, Naoki Ohashi, and Takahisa Omata “Comprehensive first-principles study of AgGaO2 and CuGaO2 polymorphs”, Journal of the Ceramic Society of Japan, 127, 339-347 (2019).
  10. Yuki Iguchi, Kazutoshi Inoue, Taiki Sugiyama, and Hiroshi Yanagi “Single-crystal growth of Cl-doped n-type SnS using SnCl2 self-flux”, Inorganic Chemistry, 57, 6769-6772 (2018).
  11. Yuki Iguchi, Taiki Sugiyama, Kazutoshi Inoue, and Hiroshi Yanagi “Segregation of chlorine in n-type tin monosulfide ceramics: Actual chlorine concentration for carrier-type conversion”, Applied Physics Letters, 112, 202102 (2018).
  12. Hiroshi Yanagi, Yusuke Koyamaishi, Chiyuki Sato, and Yota Kimura “Transparent semiconducting amorphous cadmium-gallium-tin oxide films by magnetron sputtering with water vapor”, Applied Physics Letters, 110, 252107 (2017).
  13. Chiyuki Sato, Yota Kimura, and Hiroshi Yanagi “Vacuum, Ar, and O2 annealing effects on bandgap-tunable semiconducting amorphous Cd-Ga-O thin films”, Journal of the Ceramic Society of Japan, 125, 333-337 (2017).
  14. Chiyuki Sato, Yota Kimura, and Hiroshi Yanagi “Effects of vacuum annealing on carrier transport properties of band gap-tunable semiconducting amorphous Cd-Ga-O thin films”, Thin Solid Films, 624, 29-33 (2017).
  15. Issei Suzuki, Hiraku Nagatani, Masao Kita, Yuki Iguchi, Chiyuki Sato, Hiroshi Yanagi, Naoki Ohashi and Takahisa Omata “First principles Study of CuGaO2 Polymorphs: Delafossite α-CuGaO2 and Wurtzite β-CuGaO2”, Inorganic Chemistry, 55, 7610-7616 (2016).
  16. Jonas Deuermeier, Thorsten Bayer, Hiroshi Yanagi, Asal Kiazadeh, Rodrigo Martins, Andreas Klein, Elvira Fortunato “Substrate reactivity as origin of Fermi level pinning at the Cu2O/ALD-Al2O3 interface”, Materials Research Express, 3, 046404 (2016).
  17. Hiroshi Yanagi, Yuki Iguchi, Taiki Sugiyama, Toshio Kamiya and Hideo Hosono “N-type conduction in SnS by anion substitution with Cl”, Applied Physics Express, 9, 051201 (2016).
  18. Issei Suzuki, Hiraku Nagatani, Masao Kita, Yuki Iguchi, Chiyuki Sato, Hiroshi Yanagi, Naoki Ohashi and Takahisa Omata “First principles calculations of ternary wurtzite β-CuGaO2”, Jounal of Applied Physics, 119, 095701 (2016).
  19. Hiroshi Yanagi, Chiyuki Sato, Yota Kimura, Issei Suzuki, Takahisa Omata, Toshio Kamiya, and Hideo Hosono “Widely bandgap tunable amorphous Cd-Ga-O oxide semiconductors exhibiting electron mobilities ≥10 cm2V-1s-1”, Applied Physics Letters, 106, 082106 (2015).
  20. Sakyo Hirose, Hideki Yoshikawa, Hiroshi Yanagi, Akira Ando, Shigenori Ueda, and Naoki Ohashi, “Impact of Electrode Oxidation on the Current Transport Properties at Platinum/(Niobium-Doped Strontium-Titanate) Schottky Junctions”, ECS J. Solid State Sci. Tech., 3, P243-P248 (2014).
  21. Takahisa Omata, Hiraku Nagatani, Issei Suzuki, Masao Kita, Hiroshi Yanagi, and Naoki Ohashi, “Wurtzite CuGaO2: A New Direct and Narrow Band Gap Oxide Semiconductor Applicable as a Solar Cell Absorber”, J. Am. Chem. Soc. (commun.), 136, 3378-3381 (2014).
  22. Masahiro Yasukawa, Toshio Kono, Kazushige Ueda, Hiroshi Yanagi, Sung Wng Kim, Hideo Hosono, "Thermoelectric properties and figure of merit of perovskite-type Ba1-xLaxSnO3 with x=0.002-0.008", Solid State Comm., 172, 49-53 (2013).
  23. Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Eiji Ikenaga, Takeharu Sugiyama, Keisuke Kobayashi, Hideo Hosono, “Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy”, J. Appl. Phys., 112, 033713-1-6 (2012).
  24. Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono, "Photovoltaic properties of n-type amorphous In–Ga–Zn–O and p-type single crystal Si heterojunction solar cells: Effects of Ga content", Thin Solid Films, 520, 3808-3812 (2012).
  25. Hiroshi Yanagi, Toshifumi Kuroda, Ki-Beom Kim, Yoshitake Toda, Toshio Kamiya, Hideo Hosono, “Electron injection barriers between air-stable electride with low work function, C12A7:e-, and pentacene, C60 and copper phthalocyanine”, J. Mater. Chem., 22, 4278-4281 (2012).
  26. Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono, “Electronic Structure and Photovoltaic Properties of n-Type Amorphous In-Ga-Zn-O and p-Type Single Crystal Si Heterojunctions”, Electrochemical and Solid-State Letters, 14, H346-H349 (2011).
  27. Kenji Nomura, Toshio Kamiya, Eiji Ikenaga, Hiroshi Yanagi, Keisuke Kobayashi, Hideo Hosono, “Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ay photoelectron spectroscopy”, Journal of Applied Physics, 109, 73726 (2011).
  28. Masahiro Yasukawa, Yukihiro Hamada, Toshio Kono, Kazushige Ueda, Hiroshi Yanagi, Sung Wng Kim, Hideo Hosono, “Thermoelectric Properties of P-type BaSnO3 Ceramics Doped with Cobalt”, Journal of the Japan Society of Powder and Powder Metallurgy, 58, 149-154 (2011).
  29. Hideo Hosono, Yoichi Ogo, Hiroshi Yanagi, Toshio Kamiya, “Bipolar Conduction in SnO Thin Films”, Electrochemical and Solid-State Letters, 14, H13-16 (2011).
  30. Toshio Kamiya, Hiroshi Yanagi, Takumi Watanabe, Masahiro Hirano, Hideo Hosono, “Electronic structures of MnP-based crystals: LaMnOP, BaMn2P2, and KMnP”, Materials Science and Engineering B, 173, 239-243 (2010).
  31. Hiroshi Yanagi, Katsutoshi Fukuma, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “Electrical and magnetic properties of quaternary compounds LnMnPO (Ln = Nd, Sm, Gd) with ZrCuSiAs-type structure”, Materials Science and Engineering B, 173, 47-50 (2010).
  32. Y. Nishio, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono, “Short-channel nanowire transistor using a nanoporous crystal semiconductor 12CaO・7Al2O3”, Materials Science and Engineering B, 173, 37-40 (2010).
  33. Masahiro Yasukawa, Toshio Kono, Kazushige Ueda, Hiroshi Yanagi, Hideo Hosono, “High-temperature thermoelectric properties of La-doped BaSnO3 ceramics”, Materials Science and Engineering B, 173, 29-32 (2010).
  34. Yutomo Kikuchi, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing”, Thin Solid Films, 518, 3017-3021 (2010).
  35. Dong Hee Lee, Ken-ichi Kawamura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “Steady-state photoconductivity of amorphous In-Ga-Zn-O”, Thin Solid Films, 518, 3000-3003 (2010).
  36. Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi , Toshio Kamiya, Masahiro Hirano, and Hideo Hosono, “Fabrication of Atomically Flat ScAlMgO4 Epitaxial Buffer Layer and Low-Temperature Growth of High-Mobility ZnO Films”, Cryst. Growth & Des., 10, 1084-1089 (2010).
  37. Takayoshi Katase, Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped BaFe2As2”, Solid State Commun., 149, 2121-2124 (2009).
  38. Hitoshi Sugawara, Kenji Ishida, Yusuke Nakai, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono, “ Two-Dimensional Spin Dynamics in the Itinerant Ferromagnet LaCoPO Revealed by Magnetization and 31P-NMR Measurements”, Journal of the Physical Society of Japan, 78, 113705 (2009).
  39. Hiroshi Yanagi, Ki-Beom Kim, Ikue Koizumi, Maiko Kikuchi, Hidenori Hiramatsu, Masashi Miyakawa, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “Low threshold voltage and carrier injection properties of inverted organic light-emitting diodes with [Ca24Al28O64]4+(4e-) cathode and Cu2-xSe anode”, Journal of Physical Chemistry C, 113, 18379-18384 (2009).
  40. Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, Hideo Hosono, “Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application”, Phys. Stat. Solidi (a), 206, 2187-2191, (2009).
  41. Kosuke Matsuzaki, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “Effects of post-annealing on (110) Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor”, Phys. Stat. Solidi (a), 206, 2192-2197 (2009).
  42. M. Yasukawa, T. Kono, H. Yanagi, H. Hosono, “High-Temperature Thermoelectric properties of La-doped Ba1-xSrxSnO3 Ceramics”, J. Jpn. Soc. Power & Power Metallurgy, 56, 555-560 (2009).
  43. H. Yanagi, T. Watanabe, K. Kodama,　 S. Iikubo,　 S. Shamoto,　 T. Kamiya,　 M. Hirano, and H. Hosono, “Antiferromagnetic bipolar semiconductor LaMnPO with ZrCuSiAs-type structure”, J. Appl. Phys., 105, 93916 (2009).
  44. Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO4”, Mater. Sci. & Eng. B, 161, 66-70 (2009).
  45. Hidenori Hiramatsu, Yoichi Kamihara, Hiroshi Yanagi, Kazushige Uedaa, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “Layered mixed-anion compounds: Epitaxial growth, active function exploration, and device application”, J. Euro. Ceram. Soc., 29, 245-253 (2009).
  46. Hiroshi Yanagi, Maiko Kikuchi, Ki-Beom Kim, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “Low and small resistance hole-injection barrier for NPB realized by wide-gap p-type degenerate semiconductor, LaCuOSe:Mg”, Organic Electronics, 9, 890-894 (2008).
  47. Hiroshi Yanagi, Ryuto Kawamura, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Tetsuya Nakamura, Hitoshi Osawa, Hideo Hosono, “Itinerant Ferromagnetism in layered crystals LaCoOX (X = P, As)”, Phys. Rev. B, 77, 224431-1-7 (2008).
  48. Hidenori Hiramatsu, Ikue Koizumi, Ki-Beom Kim, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Noriaki Matsunami, and Hideo Hosono, “Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors”, J. Appl. Phys., 104, 113723-1-8 (2008).
  49. Satoru Matsuishi, Yasunori Inoue, Takatoshi Nomura, Hiroshi Yanagi, Masahiro Hirano, and Hideo Hosono, “Superconductivity Induced by Co-Doping in Quaternary Fluoroarsenide CaFeAsF”, J. Am. Chem. Soc. (commun.), 130, 14428-14429 (2008).
  50. Kosuke Matsuzaki, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono, “Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor”, Appl. Phys. Lett., 93, 202107-1-3, (2008).
  51. Hironari Okada, Yuki Takahashi, Kazumi Igawa, Kazunobu Arii, Hiroki Takahashi, Takumi Watanabe, Hiroshi Yanagi, Yoichi Kamihara, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, Satoshi Nakano, Takumi Kikegawa, “Pressure effects on superconducting and structural properties for nickel-based superconductors LaNiXO (X = P and As)”, J. Phys. Soc. Jpn. Suppl. C, 77, 119-120, (2008).
  52. Yoichi Kamihara, Hidenori Hiramatsu, Masahiro Hirano, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono, “Electronic and magnetic properties of layered LnFePO (Ln = La and Ce)”, J. Phys. Chem. Solids, 69, 2916-2918 (2008).
  53. Youichi Ogo, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “Amorphous Sn-Ga-Zn-O channel thin-film transistors”, Phys. Stat. Solidi (a), 205, 1920-1924, (2008).
  54. T. Kamiya, K. Tajima, K. Nomura, Hiroshi Yanagi, and H. Hosono, “Interface electronic structures of zin oxide and metals: First-principle study”, Phys. Stat. Solidi (a), 205, 1929-1933, (2008).
  55. Y. Nishio, K. Nomura, M. Miyakawa, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono, “Fabrication and transport properties of 12CaO•7Al2O3 (C12A7) electride nanowire”, Phys. Stat. Solidi (a), 205, 2047-2051, (2008).
  56. Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Noriaki Matsunami, Ken-ichi Shimizu, and Hideo Hosono, “Electrical and optical properties of copper-based chalcogenide thin films deposited by pulsed laser deposition at room temperature: Toward p-channel thin film transistor fabricable at room temperature”, Phys. Stat. Solidi (a), 205, 2007-2012 (2008).
  57. Takumi Watanabe, Hiroshi Yanagi, Yoichi Kamihara, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “Nickel-based layered superconductor, LaNiOAs”, J. Solid State Chem., 181, 2117-2120 (2008).
  58. Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono, “P-channel thin film transistor using p-type oxide semiconductor, SnO”, Appl. Phys. Lett., 93, 032113-1-3 (2008).
  59. Takashi Mine, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono, “Nickel-based phosphide superconductor with infinite-layer structure, BaNi2P2”, Solid State Comm., 147, 111-113 (2008).
  60. Yoichi Kamihara, Masahiro Hirano, Hiroshi Yanagi, Toshio Kamiya, Yuji Saitoh, Eiji Ikenaga, Keisuke Kobayashi, Hideo Hosono, “Electromagnetic properties and electronic structure of iron-based layered superconductor LaOFeP”, Phys. Rev. B, 77, 214515-1-9 (2008).
  61. Takashi Mine, Hiroshi Yanagi, Kenji Nomura, Toshio Kamiya Masahiro Hirano, and Hideo Hosono, “Control of carrier concentration and surface flattening of CuGaO2 epitaxial films for a p-channel transparent transistor”, Thin Solid Films, 516, 5790-5794 (2008).
  62. Kentaro Kayanuma, Ryuto Kawamura, Hidenori Hiramatsu, Hiroshi Yanagi, Masahiro Hirano, Toshio Kamiya, and Hideo Hosono, “Heteroepitaxial growth of layered semiconductors, LaZnOPn (Pn = P and As)”, Thin Solid Films, 516, 5800-5804 (2008).
  63. Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano and Hideo Hosono, “Fabrication of ScAlMgO4 single-crystalline thin films using ScGaO3(ZnO)m buffer layers and its application to lattice-matched buffer layer for ZnO”, Thin Solid Films, 516, 5842-5846 (2008).
  64. Yasuhiro Shimura, Kenji Nomura, Hiroshi Yanagi, Tosho Kamiya, Masahiro Hirano, and Hideo Hosono, “Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes”, Thin Solid Films, 516, 5899-5902 (2008).
  65. Kenji Nomura, Toshio Kamiya, Hiroshi Yanagi, Eiji Ikenaga, Ke Yang, Keisuke Kobayashi, Masahiro Hirano, and Hideo Hosono, “Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy”, Appl. Phys. Lett., 92, 202117-1-3 (2008).
  66. Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Kazushige Ueda, Masahiro Hirano, and Hideo Hosono, “Crystal structures, optoelectronic properties, and electronic structures of layered oxychalcogenides MCuOCh (M = Bi, La; Ch = S, Se, Te)”, Chem. Mater., 20, 326-334 (2008).
  67. Kazushige Ueda, Kouhei Takafuji, Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, and Noriaki Hamada, “Optoelectronic properties and electronic structure of YCuOSe”, J. Appl. Phys. 102, 113714-1-6 (2007).
  68. Kentaro Kayanuma, Hidenori Hiramatsu, Masahiro Hirano, Ryuto Kawamura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono, “Apparent bipolarity and Seebeck sign inversion in a layered semiconductor: LaZnOP”, Phys. Rev. B, 76, 195325-1-7 (2007).
  69. Yoshitake Toda, Hiroshi Yanagi, Eiji Ikenaga, Jung Jin Kim, Masaaki Kobata, Sigenori Ueda, Toshio Kamiya, Masahiro Hirano, Keisuke Kobayashi, and Hideo Hosono, “Work function of a room- temperature stable electride [Ca24Al28O64]4+(e-)4: a low intrinsic value (2.4 eV) and bias-induced negative work function”, Adv. Mater., 19, 3564-3569 (2007).
  70. Takumi Watanabe, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Hidenori Hiramatsu, Masahiro Hirano, and Hideo Hosono, “Nickel-Based Oxyphosphide Superconductor with a Layered Crystal Structure, LaNiOP”, Inorg. Chem. (commun.), 467719-7721 (2007).
  71. M. Yasukawa, K. Ikeuchi, T. Kono, H. Yanagi, H. Hosono, “Preparation of Semiconductive La-Doped BaSnO3 by a Polymerized Complex Method and the Thermoelectric Properties”, J. Jpn. Soc. Powder Powder Metallurgy, 54, 639-644 (2007).
  72. Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Masahiro Hirano, Maiko Kikuchi, Hiroshi Yanagi, Toshio Kamiya, and Hideo Hosono, “Heavy hole doping of epitaxial thin films of a widegap p-type semiconductor, LaCuOSe, and analysis of the effective mass”, Appl. Phys. Lett., 91, 012104-1-3 (2007).
  73. Ki-Beom Kim, Maiko Kikuchi, Masashi Miyakawa, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono, “Photoelectron Spectroscopic Study of C12A7:e- and Alq3 Interface: The Formation of a Low Electron-Injection Barrier”, J. Phys. Chem. C, 111, 8403-8406 (2007).
  74. Youichi Ogo, Hiroshi Yanagi, Toshio Kamiya, Kenji Nomura, Masahiro Hirano, Hideo Hosono, “Epitaxial film growth, optical, electrical, and magnetic properties of layered oxide In3FeTi2O10”, J. Appl. Phys., 101, 103714-1-6 (2007).
  75. H. Yanagi, J. Tate, S. Park, C -H. Park, D. A. Keszler, M Hirano and H. Hosono, “Valence band structure of BaCuSF and BaCuSeF”, J. Appl. Phys., 100, 083705-1-5 (2006).
  76. T. Kamiya, Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, M. Hirano, and H. Hosono, “Self-Adjusted, Three-Dimensional Lattice-Matched Buffer Layer for Growing ZnO Epitaxial Film”, Cryst. Growth Des., 6, 2451-2456 (2006).
  77. Hiroshi Yanagi, Shuichi Ohno, Toshio Kamiya, Hidenori Hiramatsu, Masahiro Hirano, and Hideo Hosono, “Magnetic and carrier transport properties of Mn-doped p-type semiconductor LaCuOSe: An investigation of the origin of ferromagnetism”, J. Appl. Phys., 100, 033717-1-5 (2006).
  78. Yoichi Kamihara, Hidenori Hiramatsu, Masahiro Hirano, Ryuto Kawamura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono, “Iron-based layered superconductor: LaOFeP”, J. Am. Chem. Soc. (Commun.), 128, 10012-10013 (2006).
  79. Eiji Motomitsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono, “Synthesis and characterization of layered semiconductors MCuFCh (M = Sr, Eu, Ch = S, Se)”, J. Solid State Chem., 179, 1668-1673 (2006).
  80. Kenji Sugiura, Hiromichi Ohta, Kenji Nomura, Hiroshi Yanagi, Masahiro Hirano,Hideo Hosono, and Kunihito Koumoto, “Epitaxial Film Growth and Superconducting Behavior of Sodium-Cobalt Oxyhydrate, NaxCoO2yH2O (x~0.3, y~1.3)”, Inorg. Chem. (commun.), 45, 1894-1896 (2006).
  81. Kosuke Matsuzaki, Hiroshi Yanagi, Toshio Kamiya, Hidenori Hiramatsu, Kenji Nomura, Masahiro Hirano, and Hideo Hosono, “Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3”, Appl. Phys. Lett., 88, 092106-1-3 (2006).
  82. Kosuke Matsuzaki, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor”, Thin Solid Films, 496, 37-41 (2006).
  83. Youichi Ogo, Kenji Nomura, Hiroshi Yanagi, Hiromichi Ohta, Toshio Kamiya, Masahiro Hirano and Hideo Hosono, “Growth and structure of heteroepitaxial thin films of homologous compounds RAO3(MO)m by reactive solid-phase epitaxy: applicability to a variety of materials and epitaxial template layers”, Thin Solid Films, 496, 64-69 (2006).
  84. Yujiro Takeda, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano and Hideo Hosono, “Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film”, Thin Solid Films, 486, 28-32 (2005).
  85. Akihiro Takagi, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano and Hideo Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4”, Thin Solid Films, 486, 38-41 (2005).
  86. H. Yanagi, S. Park, A.D.Draeseke, D. A. Keszler, and J. Tate, “P-type conductivity in transparent oxides and sulfide fluorides”, J. Solid State Chem., 175, 34-38 (2003).
  87. Hiroshi Yanagi, Janet Tate, Sangmoon Park, Cheol-Hee Park, and Douglas A. Keszler, “p-type conductivity in wide-band- gap BaCuQF (Q= S,Se)”,Appl. Phys. Lett., 82, 2814-2816 (2003).
  88. Ken-ichi Kawamura, Keisuke Maekawa, Hiroshi Yanagi, Masahiro Hirano, Hideo Hosono, “Observation of carrier dynamics in CdO thin films by excitation with femtosecond laser pulse”, Thin Solid Films, 445, 182-185 (2003).　
  89. Cheol-Hee Park, Douglas A. Keszler, Hiroshi Yanagi, and Janet Tate, “Gap modulation in MCu[Q1-xQ'x]F (M=Ba, Sr; Q, Q'= S, Se, Te) and related materials”, Thin Solid Films, 445, 288-293 (2003).
  90. H. Yanagi, J. Tate, R. Nagarajan and A.W. Sleight, “Electrical and optical properties of PbCu2O2”, Solid State Comm., 122, 295-297 (2002).
  91. Hiroshi Yanagi, Kazushige Ueda, Hiromichi Ohta, Masahiro Orita, M. Hirano, and Hideo Hosono, “Fabrication of all oxide transparent p-n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure”, Solid State Comm., 121, 15-17 (2002).
  92. Hiroshi Yanagi, Tomomi Hase, Shuntaro Ibuki, Kazushige Ueda and Hideo Hosono, “Bipolarity in electrical conduction of transparent oxide semiconductor CuInO2 with delafossite structure”, Appl. Phys. Lett., 78, 1583-1585 (2001).
  93. K. Ueda, T. Hase, H. Yanagi, H. Kawazoe, H. Hosono, H. Ohta, M. Orita and M. Hirano, “Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition”, J. Appl. Phys., 89, 1790-1793 (2001).
  94. Hiroshi Yanagi, Shin-ichiro Inoue, Kazushige Ueda, Hiroshi Kawazoe, Hideo Hosono and Noriaki Hamada, “Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO2”, J. Appl. Phys., 88, 4159-4163 (2000).
  95. Shuntaro Ibuki, Hiroshi Yanagi, Kazushige Ueda, Hiroshi Kawazoe and Hideo Hosono, “Preparation of n-type conductive transparent thin films of AgInO2:Sn with delafossite-type structure by pulsed laser deposition”, J. Appl. Phys., 88, 3067-3069 (2000).
  96. H. Mizoguchi, K. Ueda, K. Fukumi, N. Kitamura, T. Takeuchi, Z. Siroma, K. Kadono, H. Yanagi, H. Hosono, and H. Kawazoe, “Electronic Structure of SrNb8O14 and Mg3Nb6O11 studied by Spectroscopic Methods”, Chem. Mater., 12, 2659-2663 (2000).
  97. H. Yanagi, H. Kawazoe, A. Kudo, M. Yasukawa, and H. Hosono, “Chemical Design and Thin film Preparation of p-type Conductive Transparent Oxides”, J. Electroceram., 4, 407-414 (2000).
  98. Atsushi Kudo, Hiroshi Yanagi, Kazushige Ueda, Hideo Hosono, Hiroshi Kawazoe, Yoshihiko Yano, “Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors”, Appl. Phys. Lett., 75, 2851-2853 (1999).
  99. K. Ueda, H. Yanagi, H. Hosono, and H. Kawazoe, “Study on Electronic Structure of CaTiO3 by Spectroscopic Measurements and Energy Band Calculations”, J. Phys.: Condens. Matter., 11, 3535-3545 (1999).
  100. H. Mizoguchi, K. Fukumi, N. Kitamura, H. Yamashita, H. Yanagi, H. Hosono and H. Kawazoe, “Electronic Structure of Polycrystalline AMoO3 (A = Sr or Ba)”, J. Appl. Phys., 85, 6502-6505 (1999).
  101. A. Kudo, H. Yanagi, H. Hosono, and H. Kawazoe, “SrCu2O2: A p-Type Conductive Oxide with wide band gap”, Appl. Phys. Lett., 73, 220-222 (1998).
  102. A. Kudo, H. Yanagi, H. Hosono, and H. Kawazoe, “Enhancement of Carrier Generation in MgIn2O4 Thin Film Prepared by Pulsed Laser Deposition Technique”, Mater. Sci. Eng., B, 54, 51-54 (1998).
  103. K. Ueda, H. Yanagi, H. Hosono, and H. Kawazoe, “Carrier Compensation and Generation in Ca1-xYxTiO3 and CaTi1-xNbxO3 Single Crystals”, Mater. Sci. Eng., B, 54, 60-63 (1998).
  104. K. Ueda, H. Yanagi, H. Hosono, and H. Kawazoe, “Vacuum Ultraviolet Reflectance and Electron Energy Loss Spectra of CaTiO3”, J. Phys.: Condens. Matter., 10, 3669-3677 (1998).
  105. K. Ueda, H. Yanagi, R. Noshiro, H. Mizoguchi, T. Omata, N. Ueda, H. Hosono, and H. Kawazoe, “Observation of Electronic Structure in Conduction Band of CaTiO3”, J. Ceram Soc. Jpn., 106, 964-967 (1998).
  106. K. Ueda, H. Yanagi, H. Hosono, and H. Kawazoe, “Carrier Generation and Compensation in Y-and Nb-doped CaTiO3 Single Crystals, Phys. Rev. B, 56, 12998-13005 (1997).
  107. H. Kawazoe, M. Yasukawa, H. Hyodo, M. Kurita, H. Yanagi, and H. Hosono, “P-Type Electrical Conduction in Transparent Thin Film of CuAlO2”, Nature, 389, 939-942 (1997).

    著書

  1. 日本学術振興会　透明酸化物光・電子材料第１６６委員会（編）,
    透明導電膜の技術　改訂第３版
    第８章　第２節　柳 博, Ｘ線を用いた薄膜評価法, 387-390, オーム社 (2014).
  2. 大橋直樹（監修）, バンドギャップエンジニアリング−次世代高効率デバイスへの挑戦−
    第５章　神谷利夫, 柳 博, 戸田喜丈, 細野秀雄, 透明導電体のバンドアライメントとヘテロ接合, 138-153, シーエムシー出版 (2011).
  3. 有機ＥＬ照明用材料の開発と評価技術
    第２章 第７節　柳 博, 細野 秀雄, 電子注入電極としてのＣ１２Ａ７エレクトライド, 62-68, サイエンス＆テクノロジー (2010). 　
  4. 細野 秀雄，平野 正浩（監修），透明酸化物機能材料とその応用
    第２章 第１節　柳 博,　透明p型導電性酸化物, 33-45,　シーエムシー出版 (2006).

    総説

  1. 柳 博, 神谷 利夫, ｢n型透明導電性酸化物の特徴と進展｣, セラミックス, 42, 37-41 (2007). 　
  2. H. Kawazoe, H. Yanagi, K. Ueda, and H. Hosono, "Transparent p-Type Conducting Oxides: Design and Fabrication of p-n Heterojunctions", Mater. Res. Soc. Bull., 25, 28-36 (2000).
　　　
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