| REFEREED JOURNAL ARTICLES | Link | |||
| 1 | Comparative
study of pore size of low-dielectric-constant porous spin-on-glass films
using different methods of nondestructive instrumentation E. Kondoh, M. R. Baklanov, E.. Lin, D. Gidley, and A. Nakashima |
Japanese Journal of Applied Physics, Vol. 40, No. 4A, pp.L323-L326 | 2001 | more … |
| 2 | Change of Refractive Index and Thickness of Porous Spin-on-Glass Films during Exposure to Ar, O2, and H2 plasma | Eurasina ChemTech Journal, Vol. 2, 245-250 | 2000 | |
| 3 | Adhesion and Texture of Cu-1 mass% Thin Films Deposited on Polyimide | Journal of Japan Institute of Metals, Vol. 64, No. 9, 715-718 | 2000 | |
| 4 | Dehydration
after plasma oxidation of porous low-dielectric-constant spin-on-glass films E. Kondoh, T. Asano, H. Arao, A. Nakashima, and M. Komatu |
Japanese Journal of Applied Physics, Vol. 39, No. 7A, pp.3919-3923 | 2000 | more … |
| 5 | Wafer Thermal Desorption Spectrometry in a Rapid Thermal Processing Reactor Using Atmospheric Pressure Ionization Mass Spectrometry, G. Vereecke, E. Kondoh, P. Richardson, K. Maex, M.M. Heyns, and Z. Nenyei. | IEEE Trans. Semicon. Manufacturing, Vol. 13, No.3, pp.315-321. (Piscataway, NJ) | 2000 | |
| 6 | Application of in-line oxygen monitoring
to a rapid thermal processing tool:
diagnosing gas flow dynamics
and silicidation processes E. Kondoh, M. R. Baklanov, and K. Maex |
Materials Science in Semiconductor Processing, Vol 2, No. 4, pp.341-348. | 1999 | more … |
| 7 | Effect of Oxygen
Plasma Exposure of Porous Spin-On-Glass Films E. Kondoh, T. Asano, A. Nakashima, and M. Komatsu |
Journal of Vacuum Science and Technology, Vol. B18, No. 3, pp.1276-1280. | 2000 | more … |
| 8 | Material
characterization of Cu(Ti)-polyimide thin film stacks E. Kondoh |
Thin Solid Films, Vol. 359, No. 2, pp. 255-260.(Amsterdam) | 2000 | more … |
| 9 | A chemical role
of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti
cap E. Kondoh, T. Conard, S. J. W. Vandervorst, H. Bender, M. de Potter, and K. Maex |
Journal of Materials Research, Vol. 14, No. 11, pp. 4402-4408.(Pittsburgh, PA) | 1999 | more … |
| 10 | Process
integration induced thermodesorption from SiO2/SiLK resind dielectric based
interconnects M. R. Baklanov, M. Muroyama, M. Judelewicz, E. Kondoh, H. Li, J. Waeterloos, S. Vanhaelemeersch, and K. Maex |
Journal of Vacuum Science and Technology, Vol. B17, No. 5, pp. 2136-2146.(New York) | 1999 | more … |
| 11 | X-ray
photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry
study of the role of Ti and TiN caps on the cobalt/SiO2 interface T. Conard, E. Kondoh, H. De Witter, K. Maex, and W. Vandervorst |
Journal of Vacuum Science and Technology, Vol. A17, No. 4, pp. 1244-1249.(New York) | 1999 | more … |
| 8 | Self-Aligned
CoSi2 for 0.18 um and Below K. Maex, A. Lauwers, P. Besser, E. Kondoh, M. de Potter, and A. Steegen |
IEEE Transactions on Electron Devices, Vol. 46, No. 7,pp. 1545-1550.(Washington D.C.) | 1999 | |
| Characterization
of HF Cleaning of Ion-Implanted Si Surfaces E. Kondoh, M. R. Baklanov, and K. Maex |
Solid State PhenomenaVol. 65/66, pp.271-274. | 1999 | ||
| 14 | Measurements of
trace ambient gaseous impurities on an atmospheric pressure rapid thermal
processor E. Kondoh, G. Vereecke, M. M. Heyns, K. Maex, and T. Gutt |
Journal of Vacuum Science and Technology, Vol. A17, No. 2pp. 650-656.(New York) | 1999 | |
| 15 | Structural
Change in Porous Silica Thin Films after Plasma Treatment E. Kondoh, M. R. Baklanov, H. Bender, and K. Maex |
Electrochemical and Solid-State Letters, Vol. 1, No. 5, pp. 224-226.(Pennington, NJ) | 1998 | more … |
| 16 | Interaction
between Co and SiO2 E. Kondoh, R. A. Donaton, S. Jin, H. Bender, and K. Maex |
Appl. Surf. Sci., Vol. 136, No. 1/2pp. 87-94(Amsterdam) | 1998 | more … |
| 17 | Characterization
of HF-last cleaning of ion-implanted Si surfaces E. Kondoh, M. R. Baklanov, F. Jonckx, and K. Maex |
Materials Science in Semiconductor Processing, Vol. 1, No. 2, pp. 107-117.(Amsterdam) | 1998 | |
| 18 | Limitation of
HF-Based Chemistry for Deep-Submicron Contact Hole Cleaning on
Silicides M. R. Baklanov, E. Kondoh, R. A. Donaton, S. Vanhaelemeersch, and K. Maex |
Journal of Electrochemical Society, Vol. 145, No. 9, pp. 3240-3246.(Pennington, NJ) | 1998 | |
| 19 | Critical role of
degassing for hot aluminum filling J. Proost, E. Kondoh, G. Vereecke, M. Heyns, and K. Maex |
Journal of Vacuum Science and Technology, Vol. B16, No. 4, pp. 2091-2098.(Pennington, NJ) | 1998 | |
| 20 | Oxidation and
roughening of silicon during annealing in a rapid thermal processing
chamber B. Mohadjeri, M. Baklanov, E. Kondoh, and K. Maex |
Journal of Applied Physics, Vol. 83, No. 7, pp. 3614-3619.(College Park, MD) | 1998 | |
| 21 | Interactions at
interface between Cu99Ti1 films and polyimide E. Kondoh, T.-P. Nguyen, D. Plachke, H. Carstanjen, and E. Arzt |
Applied Physics Letters, Vol. 70, No. 10, pp.1251-1253.(College Park, MD) | 1997 | more … |
| 22 | Chemical vapor
deposition of aluminum from dimethylaluminumhydride (DMAH): Characteristics
of DMAH vaporization and Al growth kinetics E. Kondoh and T. Ohta |
Journal of Vacuum Science and Technology, Vol. A13, No. 6, pp. 2863-2871.(New York) | 1995 | more … |
| 23 | Interconnection
Formation by Doping Chemical-Vapor-Deposition Aluminum with Copper
Simultaneously: Al-Cu CVD E. Kondoh, Y. Kawano, N. Takeyasu, and T. Ohta |
Journal of Electrochemical Society, Vol. 141, No. 12, pp. 3494-3499.(Pennington, NJ) | 1994 | more … |
| 24 | Effect of
gas-phase composition on the surface morphology of polycrystalline diamond
films E. Kondoh, T. Ohta, T. Mitomo, and K. Ohtsuka |
Diamond and Related Materials, Vol. 3, pp. 270-276.(Amsterdam) | 1994 | more … |
| 25 | Characterization
of direct-contact via plug formed by using selective aluminum chemical vapor
deposition N. Takeyasu, Y. Kawano, E. Kondoh, T. Katagiri, H. Yamamoto, H. Shinriki, and T. Ohta |
Japanese Journal of Applied Physics, Vol. 33, No. 1B, pp. 424-428.(Tokyo) | 1994 | |
| 26 | Reactive-flow
simulation of the hot-filament chemical-vapor deposition of diamond E. Kondoh, K. Tanaka, and T. Ohta |
Journal of Applied Physics, Vol. 74, No. 7, pp. 4513-4520.(Tokyo) | 1993 | more … |
| 27 | Homoepitaxial
growth of diamond by an advanced hot- filament chemical vapor deposition
method E. Kondoh, K. Tanaka, and T. Ohta |
Journal of Applied Physics, Vol. 74, No. 3, pp. 2030-2035.(College Park, MD) | 1993 | more … |
| 28 | Metalorganic
Chemical Vapor Deposition of Aluminum-Copper Alloy Films T. Katagiri, E. Kondoh, N. Takeyasu, T. Nakano, H. Yamamoto, and T. Ohta |
Japanese Journal of Applied Physics, Vol. 32, No. 8A, pp. L1078-L1080.(Tokyo) | 1993 | |
| 29 | Reflection
High-Energy Electron Diffraction Observation of Anti-Phase Domain Ordering of
the 2x1 Reconstructed (111) Surface of Chemical-Vapor-Deposited Diamond E. Kondoh, K. Tanaka, and T. Ohta |
Japanese Journal of Applied Physics, Vol. 32, No. 7A, pp. L947-L949.(Tokyo) | 1993 | more … |
| 30 | Surface reaction
kinetics of gas-phase diamond growth E. Kondoh, T. Ohta, T. Mitomo, and K. Ohtsuka |
Journal of Applied Physics, Vol. 73, No. 6, pp. 3041-3046.(College Park, MD) | 1993 | |
| 31 | Thermal Chemical
Vapor Deposition of Diamond from Methane-Hydrogen Gas System Pyrolized at Low
Temperature (1450 °C) E. Kondoh, T. Ohta, T. Mitomo, and K. Ohtsuka |
Japanese Journal of Applied Physics, Vol. 31, No. 12B, pp. L1781-L1784.(Tokyo) | 1992 | |
| 32 | Experimental and
calculational study on diamond growth by an advanced hot filament chemical
vapor deposition method E. Kondoh, T. Ohta, T. Mitomo, and K. Ohtsuka |
Journal of Applied Physics, Vol. 72, No. 2, pp. 705-711.(College Park, MD) | 1992 | |
| 33 | Determination of
activation energies for diamond growth by an advanced hot filament chemical
vapor deposition method E. Kondoh, T. Ohta, T. Mitomo, and K. Ohtsuka |
Applied Physics Letters, Vol. 59, No. 4, pp. 488-490.(College Park, MD) | 1991 | more … |
| 34 | An Investigation
of product distributions in microwave plasma for diamond growth T. Mitomo, T. Ohta, E. Kondoh, and K. Ohtsuka |
Journal of Applied Physics, Vol. 70, No. 8, pp. 4532-4539.(College Park, MD) | 1991 | more … |
| 35 | Chemical Vapor
Deposition of Diamond Films by an Advanced Hot Filament Method E. Kondoh, T. Mitomo, T. Ohta, and K. Ohtsuka |
Hyomen Kagaku (Journal of the Surface Science Society of Japan), 12 (5), 336-338 (1991) [in Japanese]. | 1991 | |
| 36 | Effect of Sulfur
Addition on the Solid-Liquid Interface Morphologies of Unidirectionary
Solidified Fe-C Eutectic Alloys E. Kondoh and H. Nakae |
Nihon Kinzoku Gakkai Shi (Journal of the Japan Institute of Metals) 55 (4), 437-443 (1991) [in Japanese]. | 1991 | |
| REVIEW REPORTS | ||||
| 1 | Mesoscopic Structure of Porous Low-Dielectric-Constant Thin Films | Oyo-butsuri, Vol. 70, No. 5, 546-549. [in Japanese] | 2001 | |
| 2 | Technology Development of Via Hole Filling Direct on Al by Selective Al-CVD; T. Ohta, N. Takeyasu, E. Kondoh, Y. Kawano, and H. Yamamoto | Materia Japan (Bulletin of the Japan Institute of Metals) 34 (6), 780-782 (1995). [in Japanese] | 1995 | |
| 3 | Selective Al-CVD and its EM tolerance, Y. Kawano, E. Kondoh, N. Takeyasu, and T. Ohta | Semiconductor World, 13[14] (Dec. issue) (1994) , 181. [in Japanese] | 1994 | |
| 4 | Diamond Synthesis by the Hot-Filament CVD with Exactly Controlling Deposition Temperature, E. Kondoh and T. Ohta | New Diamond 10[1] (1993) 13. [in Japanese] | 1993 | |
| 5 | Gas Phase Reactions for Diamond Growth, T. Ohta, E. Kondoh, and T. Mitomo | New Diamond 9[2] (1992) 15 [in Japanese] | 1992 | |
| CONFERENCE PROCEEDINGS | ||||
| 1 | Materials Issues in Silver
Metallization, E. Kondoh and T. Asano |
Proceedings of the Advanced Metallization Conference 1999, to be published. | ||
| 2 | Development of a non-destructive
thin film porosimetry: pore size distribution and pore volume of porous
silica, M.R. Baklanov, F.N. Dultsev, E. Kondoh, K.P. Mogilnikov, K. Maex,
S.-Q. Wang, L. Forester |
Proceedings of the Advanced Metallization Conference 1998, (Mater. Res. Soc., Warrendale, PA 1999), p. 507. | ||
| 3 | Control and impact of processing ambient during rapid thermal silicidation, K. Maex, E. Kondoh, A. Lauwers, A. Steegen, M. de Potter, P. Besser, and J. Proost | Mater. Res. Soc. Symp. Proc.,
vol. 525, p. 297. |
||
| 4 | In-line ambient measurement of a rapid thermal process chamber by atmospheric pressure ionisation mass spectrometry, E. Kondoh, G. Vereecke, K. Maex, T. Gutt, Z. Nenyei | Mater. Res. Soc. Symp. Proc., vol. 525, p. 51. | ||
| 5 | In-line monitoring of HF-last cleaning of implanted and non-implanted silicon surfaces by non-contact surface charge measurements, E. Kondoh, M.-A. Trauwaert, M. Heyns, and K. Maex | The proceedings of the fifth international symposium on cleaning technology in semiconductor device manufacturing, Electrochemical Society Proceedings, Vol. 97-35, pp. 221-228. | ||
| 6 | Applicability of wet cleaning for submicron hydrophilic features, M. R. Baklanov, E. Kondoh, S. Vanhaelemeersch, and K. Maex | The proceedings of the fifth international symposium on cleaning technology in semiconductor device manufacturing, , Electrochemical Society Proceedings, Vol. 97-35, pp. 602-609. | ||
| 7 | In situ Gas Analysis on an RTP Tool With APIMS, G. Vereecke, E. Kondoh, P. Richardson, K. Maex, M.M. Heyns, and Z. Nenyei | The proceedings of the 44th Annual Technical Meeting of Institute of Environmental Science and Technology (Phoenix, Arizona, April 26-May1, 1988), p. 519-526. | ||
| 8 | In-line Ambient Monitoring during Silicide Rapid Thermal Processing, E. Kondoh and K. Maex | Mat. Res. Soc. Proc. Vol. 470 (1998), pp. 245-251. | ||
| 9 | Material Characterization of Cu99Ti1 alloy films metallized on polyimide, E. Kondoh and T.-P. Nguyen | Mat. Res. Soc. Proc. Vol. 476 (1998), pp. 81-86. | ||
| 10 | Interfacial interaction between CuTi films and polyimide, E. Kondoh, T.P. Nguyen, D.-W. Plachke, and H. Carstanjen | In the proceeding of the seconde international conference on polymer sicence, 12-16 August 1996, Namur, Beligum, Presses Univ. de Namur (1998), pp. 207-213. | ||
| 11 | New Structure of Selective-CVD-Al Filling Direct on Al for Submicron Plug Applications and Process Using UHV Cluster Tool, T. Ohta, N. Takeyasu, E. Kondoh, Y. Kawano, and H. Yamamoto | In Extended Abstracts of the 1994 VLSI Multilevel Interconnection Conference, p. 214. | ||
| 12 | Direct Via Hole Filling on Al wiring by Selective Al-CVD, Y. Kawano, E. Kondoh, N. Takeyasu, H. Yamamoto, and T. Ohta | In Advanced Metallization for ULSI Applications in 1993 (MRS, PA, 1993), p. 317. | ||
| 13 | Interconnection fabrication by simultaneous copper doping to chemical-vapor-deposited aluminum (Al-Cu CVD), E. Kondoh, Y. Kawano, N. Takeyasu, T. Katagiri, H. Yamamoto, and T. Ohta | In Technical Digest of the 1993 IEEE International Electron Devices Meetings (IEEE, Washington DC., 1993), p. 277. | ||
| 14 | Characterization of Direct-Contact Via Plug Formed by Use of Selective Al-CVD, N. Takeyasu, Y. Kawano, T. Katagiri, E. Kondoh, H. Yamamoto, and T. Ohta | In Extended Abstract of the 1993 International Conference on Solid State Devices and Materials (the Japan Society of Applied Physics, Tokyo, 1993), p. 180. | ||
| 15 | Gas Phase Reactions for Diamond Growth, T. Ohta, E. Kondoh, and T. Mitomo | In Extended Abstracts of the 3rd International Symposium on Diamond Materials. | ||
| 16 | Determination of activation energies for diamond growth by an advanced hot filament chemical vapor deposition method, E. Kondoh, T. Mitomo, T. Ohta, K. Ohtsuka, and Y. Habu | In Proceedings of the Special symposium on advanced materials-III, (November 1991, Nagoya Japan), p. 171. | ||
| 17 | In-situ FT-IR Detection of Stable Compounds in the Microwave Plasmas of Various Source Gases for Vapor Phase Diamond Growth, T. Mitomo, T. Ohta, E. Kondoh, K. Ohtsuka, and Y. Habu | New Diamond Science and Technology (MRS, PA, 1991), p. 213. | ||
| INTERNATIONAL CONFERENCES | ||||
| 1 | Materials Issues in Silver
Metallization, E. Kondoh and T. Asano |
Advanced Metallization Conference 1999, (October 1999, Tokyo). | ||
| 2 | Effect of Plasma Exposure to Ultra Low-K Porous SOG Films, E. Kondoh, T. Asano, A. Nakashima, and M. Komatsu | SEMATECH Ultra Low-K Workshop (Mar. 1999, Orlando), pp. 487-498 | ||
| 3 | Process intergration induced thermodesorption from SiO2 and SiLK Semiconductor Dielectric Based Interconnects, M.R.Baklanov, M.Judelewicz, E.Kondoh, H.Li, S.Vanhaelemeersch, K.Maex, J.Waeterloos, and M Muroyama | MRS (April 1999, San Francisco) | ||
| 4 | XPS study of the role of Ti and TiN caps on the Co/SiO2 interface, T. Conard, E. Kondoh, H. De Witter, K. Maex, and W. Vandervorst | 45th AVS International Symposium (Nov. 1998, Baltimore) | ||
| 5 | Development of a
non-destructive thin film porosimetry: pore size distribution and pore volume
of porous silica, M.R. Baklanov, F.N. Dultsev, E. Kondoh, K.P. Mogilnikov, K.
Maex, S.-Q. Wang, L. Forester |
Advanced Metallization Conference 1998 (Tokyo/Colorad Springs, Sep/Oct, 1998). | ||
| 6 | Characterisation of HF-last cleaning of ion-implanted Si surfaces, E. Kondoh, M. R. Baklanov, and K. Maex | 4th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98) (Sep. 1998, Oostende, Belgium) | ||
| 7 | Performance and manufacturability of the Co/Ti (cap) silicidation process for 0.25um MOS-technologies, A. Lauwers, P. Besser, M. de Potter, E. Kondoh, N. Roelandts, A. Steegen, M. Stucchi, K. Maex | 1998 International Interconnect Technology Conference (IITC) (June 1998, Burlingame, CA) | ||
| 8 | The control and impact of processing ambient during RTP, K. Maex, E. Kondoh, A. Lauwers, M. De Potter, and J. Proost | MRS (April 1998, San Francisco) | ||
| 9 | In-line Ambient Impurity Measurement of a Rapid Thermal Process Chamber by using Atmospheric Pressure Ionization Mass Spectrometer, E. Kondoh, G. Vereecke, K. Maex, T. Gutt, Z. Néynei | MRS (April 1998, San Francisco) | ||
| 10 | In Situ Gas Analysis on an RTP Tool With APIMS, G. Vereecke, E. Kondoh, P. Richardson, K. Maex, M.M. Heyns, Z. Néynei | The Institute of Environmental Science (IES) 1998 Annula Meeting (April 1998, Phoenix, AZ) | ||
| 11 | Effect of interfacial reactions on the microstructure of Al thin films deposited on polyimide, E. Kondoh | Advanced Metallization and Interconnect Systems for ULSI Applications in 1997 (September 1997, San Diego) | ||
| 12 | Monitoring of HF-last cleaning of Si surfaces by surface charge measurements, E. Kondoh, M.-A. Trauwaert, M. Heyns, K. Maex | 1997 Fall Electrochemical Society Meetings (August 1997, Paris) | ||
| 13 | Applicability of Wet Cleaning for Submicron Hydrophilic Features, M. R. Baklanov, E. Kondoh, S. Vanhaelemeersch, K. Maex | 1997 Fall Electrochemical Society Meetings (August 1997, Paris) | ||
| 14 | In-line Ambient Monitoring during Silicide Rapid Thermal Processing, E. Kondoh and K. Maex | 1997 Spring Materials Research Society Meetings (March 1997, San Francisco) | ||
| 15 | Material Characterization of Cu99Ti1 alloy films metallized on polyimide, E. Kondoh and T.-P. Nguyen, 1997 Spring Materials Research Society Meetings (March 1997, San Francisco) | 1997 Spring Materials Research Society Meetings (March 1997, San Francisco) | ||
| 16 | Interfacial interaction between CuTi films and polyimide, E. Kondoh, T.P. Nguyen, D.-W. Plachke, H. Carstanjen, and E. Arzt | International conference on polymer science (September 1996, Namur, Belgium). | ||
| 17 | Via plugging by Al-CVD - Significance of the Interface between the Via Plug and Underlayer Surface, N. Takeyasu, E. Kondoh, Y. Kawano, and T. Ohta | Advanced Metallizaition for ULSI Applications in 1994 (October 1994, Austin) | ||
| 18 | New Structure of Selective-CVD-Al Filling Direct on Al for Submicron Plug Applications and Process Using UHV Cluster Tool, T. Ohta, N. Takeyasu, E. Kondoh, Y. Kawano, and H. Yamamoto | The 1994 VLSI Multilevel Interconnection Conference (June 1994, Santa Clara, CA). | ||
| 19 | Interconnection fabrication by simultaneous copper doping to chemical-vapor-deposited aluminum (Al-Cu CVD), E. Kondoh, Y. Kawano, N. Takeyasu, T. Katagiri, H. Yamamoto, and T. Ohta | The 1993 IEEE International Electron Devices Meetings (December 1993, Washington DC.). | ||
| 20 | Via Hole Filling Directly on Al Wiring by Selective Al-CVD, Y. Kawano, E. Kondoh, N. Takeyasu, H. Yamamoto, and T. Ohta | Advanced Metallizaition for ULSI Applications in 1993 (October 1993, Tokyo) | ||
| 21 | Characterization of Direct-Contact Via Plug Formed by Use of Selective Al-CVD, N. Takeyasu, Y. Kawano, T. Katagiri, E. Kondoh, H. Yamamoto, and T. Ohta | The 1993 International Conference on Solid State Devices and Materials (August 1993, Chiba Japan) | ||
| 22 | Gas Phase Reactions for Diamond Growth, T. Ohta, E. Kondoh, and T. Mitomo | The 3rd International Symposium on Diamond and Related Materials, (May 1993, Hawaii). | ||
| 23 | Determination of Activation Energies for Diamond Growth by and Advanced Hot Filament Chemical Vapor Deposition Method, E. Kondoh, T. Ohta, T. Mitomo, and K. Ohtsuka | The Special Symposium on Advanced Materials III (November 1991, Nagoya Japan) | ||
| 24 | In-situ FT-IR Detection of Stable Compounds in the Microwave Plasmas of Various Source Gases for Vapor Phase Diamond Growth, T. Mitomo, T. Ohta, E. Kondoh, K. Ohtsuka, and Y. Habu | The 2nd International Conference on Diamond Science and Technology (Washington DC, 1990) | ||
| 25 | In-situ FT-IR Detection of Gaseous Species in Microwave Plasma for Vapor Diamond Growth, T. Ohta, T. Mitomo, E. Kondoh, K. Otsuka, and Y. Habu | SDIO/IST-ONR Diamond Technology Initiative Symposium (Washington DC, 1989) | ||
| DOMESTIC (Japanese) CONFERENCES | About 30 presentations | |||
| RESISTERED PATENTS | ||||
| 1 | Method of manufacturing semiconductor device having multilevel interconnection structure, N. Takeyasu, H. Yamamoto, Y. Kawano, E. Kondoh, T. Katagiri, T. Ohta | US 5,637,534 (June 10, 1997) | ||
| 2 | Method for making metal interconnection with chlorine plasma etch, H. Shinriki, T. Kaizuka, N. Takeyasu, T. Ohta, E. Kondoh, Y. Hiroshi, T. Katagiri, T. Nakano, Y. Kawano | US 5,627,102 (May 6, 1997) | ||
| 3 | Mothod for supplying liquid material and process for forming thin films using the liquid material supplying method, E. Kondoh, T. Mitomo, H. Yamamoto, T. Ohta | US 5,552,181 (Sept. 3, 1996) | ||
| 4 | Chemical vapor deposition method for forming thin film, T. Ohta, E. Kondoh, T. Mitomo, K. Ohtsuka, H. Sekihasi | US 5,225,245 (Jul. 6. 1993) | ||
| 5 | Chemical vapor deposition apparatus for forming thin film, T. Ohta, E. Kondoh, T. Mitomo, K. Otsuka, H. Sekihashi | US 5,209,182 (May 11, 1993) | ||
| About 90 Japanese applications have been filed. | ||||